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Dec./2006
MITSUBISHI SEMICONDUTOR
MGF1451A
Low Noise MES FET
DESCRIPTION
The MGF1451A is designed for use in S to Ku band power amplifiers.
Outline Drawing
FEATURES
High gain and High P1dB Glp=10.5dB , P1dB=13dBm (Typ.) @ f=12GHz
APPLICATION
S to Ku band power Amplifiers
QUALITY GRADE
IG
Keep Safety first in your circuit designs! ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature
(Ta=25C )
Ratings -8 -8 120 300 175 -55 to +175
(Ta=25C )
Unit V V mA mW C C
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
Synbol V(BR)GDO V(BR)GSO IGSS IDSS VGS(off) Glp P1dB Rt.
Parameter Gate to drain breakdown voltage Gate to source breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Linear Power Gain Output Power at 1dB gain Compression Thermal Resistance
Test conditions IG=-30A IG=-30A VGS=-3V VDS=0V VGS=0V VDS=3V VDS=3V ID=300A VDS=3V ID=30mA f=12GHz --
MIN. -8 -8 -35 -0.3 9.0 11.0 --
Limits TYP. ---60 -1.4 10.5 13.0 --
MAX --10 120 -3.5 --420
Unit V V uA mA V dB dBm /W
MITSUBISHI
(1/4)
Decl/2006
Dec./2006
MITSUBISHI SEMICONDUTOR
MGF1451A
Low Noise MES FET
TYPICAL CHARACTERISTICS
(Ta=25C)
80 70 DRAIN CURRENT ID(mA) 60 50 40 30 20 10 0 0
ID vs. VDS
Ta=25 VGS=-0.2V/STEP
80 70 DRAIN CURRENT ID(mA)
VGS=0V
ID VS. VDS
Ta=25 VDS=3V
60 50 40 30 20 10 0
1 2 3 4 5 DRAIN TO SOURCE VOLTAGE VDS(V)
-2.0
-1.0 0.0 GATE TO SOURCE VOLTAGE VGS(V)
Pout,Glp vs. Pin 25
Pout Glp f=12GHz VDS=3V IDS=30mA
30
20
25
Pout(dBm)
10
15
5
10
0 -10.0
-5.0
0.0 Pin(dBm)
5.0
5 10.0
MITSUBISHI
(2/4)
Glp(dB)
15
20
Decl/2006
Dec./2006
MITSUBISHI SEMICONDUTOR
MGF1451A
Low Noise MES FET
S PARAMETERS
(Conditions:VDS=3V,IDS=30mA,Ta=25deg.C)
freq (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
S11 Mag. 0.986 0.953 0.921 0.886 0.850 0.810 0.784 0.748 0.714 0.667 0.606 0.521 0.447 0.386 0.382 0.460 0.578 0.688 0.767 0.794 Angle -21.3 -41.0 -58.6 -74.3 -90.2 -101.0 -111.5 -121.3 -131.5 -143.9 -157.3 -173.0 165.7 134.3 95.5 57.9 29.8 8.2 -8.0 -20.5
S21 Mag. 4.089 3.848 3.570 3.274 3.054 2.823 2.686 2.588 2.542 2.541 2.562 2.586 2.653 2.686 2.674 2.619 2.445 2.224 1.979 1.736 Angle 159.6 140.9 124.1 109.1 93.5 80.9 68.9 57.3 45.4 33.2 19.6 5.6 -9.6 -26.7 -45.2 -65.5 -86.0 -106.6 -126.1 -145.0
S12 Mag. 0.016 0.029 0.039 0.046 0.052 0.054 0.055 0.055 0.057 0.062 0.067 0.069 0.073 0.076 0.078 0.080 0.080 0.077 0.075 0.077 Angle 75.2 61.4 50.8 41.7 31.2 24.8 19.3 15.5 13.5 11.2 4.4 -4.9 -13.3 -23.5 -37.5 -54.5 -73.9 -95.0 -117.1 -140.2
S22 Mag. 0.542 0.544 0.542 0.539 0.528 0.531 0.541 0.547 0.552 0.560 0.556 0.544 0.526 0.496 0.451 0.379 0.282 0.169 0.060 0.083 Angle -15.9 -31.0 -43.3 -52.9 -64.5 -72.5 -79.2 -85.4 -91.2 -96.6 -103.4 -109.9 -117.9 -125.7 -135.0 -144.3 -154.0 -157.6 -138.7 -42.8
K 0.17 0.30 0.40 0.51 0.64 0.82 0.93 1.08 1.17 1.18 1.27 1.46 1.52 1.58 1.60 1.57 1.54 1.51 1.46 1.48
MSG/MAG
(dB) 24.1 21.2 19.6 18.5 17.7 17.2 16.9 14.9 14.0 13.5 12.7 11.7 11.4 11.0 10.8 10.7 10.5 10.4 10.2 9.4
GaAs FET Bottom view (MGF1451A)
Calibration point
1.0mm
Gate GND Drain Microstrip line (Z0=50) Substrate (Ceramics) r=9.8
Gate Source Drain
Calibration point Calibration point
1.1mm
MetalM etal carrier carrier
Calibration point
MITSUBISHI
(3/4)
Decl/2006
Dec./2006
MITSUBISHI SEMICONDUTOR
MGF1451A
Low Noise MES FET
Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. Mitsubishi Electric does not assume responsibility for damages resulting from the use of product data, graphs, charts, programs, algorithms or other applied circuit examples described in these materials, or for the infringement of the rights of third-party owners resulting from such use. 3. The data, graphs, charts, programs, algorithms and all other information described in these materials were current at the issue of these materials, with Mitsubishi Electric reserving the right to make any necessary updates or changes in the products or specifications in these materials without prior notice. Before purchasing Mitsubishi Electric semiconductor products, therefore, please obtain the latest available information from Mitsubishi Electric directly or an authorized dealer. 4. Every possible effort has been made to ensure that the information described in these materials is fully accurate. However, Mitsubishi Electric assumes no responsibility for damages resulting from inaccuracies occurring within these materials. 5. When using the product data, technical contents indicated on the graphs, charts, programs or algorithms described in these materials, assessments should not be limited to only the technical contents, programs and algorithm units. Rather, it is requested that ample evaluations be made of each individual system as a whole, with the customer assuming full responsibility for decisions on the propriety of application. Mitsubishi Electric does not accept responsibility for the propriety of application. 6. The products described in these materials, with the exception of special mention concerning use and reliability, have been designed and manufactured with the purpose of use in general electronic machinery. Accordingly these products have not been designed and manufactured with the purpose of application in machinery or systems that will be used under conditions that can affect human life, or in machinery or systems used in social infrastructure that demand a particularly high degree of reliability. When considering the use of the products described in these materials in transportation machinery (automobiles, trains, vessels), for objectives related to medical treatment, aerospace, nuclear power control, submarine repeaters or systems or other specialized applications, please consult with Mitsubishi Electric directly or an authorized dealer. 7. When considering use of products for purposes other than the specific applications described in these materials, please inquire at Mitsubishi Electric or an authorized dealer. 8. The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer.
MITSUBISHI
(4/4)
Decl/2006

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